The monograph “Sensor Technology Elements Based on Silicon-on-Insulator Structures,” authored by Y.M. Khoverk, A.O. Druzhinin, I.T. Kogut, and O.E. Samarchuk, has been published.
The publication provides a detailed examination of current issues in the physics and technology of semiconductor devices, including the characteristics of alternating current flow, percolation transport of charge carriers, and the modeling of conductivity in recrystallized polysilicon within silicon-on-insulator (SOI) structures at low temperatures.
The experimental studies, equivalent circuits, and impedance analysis presented in the monograph provide an important theoretical and practical foundation for the design of modern high-precision sensor components and microelectronic systems.
The book will be useful for researchers, graduate students, and undergraduates majoring in “Computer Engineering” and “Computer-Aided Design of Integrated Circuits” who are involved in research and the development of promising electronic components.
We congratulate the authors on the publication of this monograph and wish them continued success in their scientific endeavors!
